控制MCU

HS6635CS是一款内置了PIR信号处理电路的MCU。PIR信号处理电路包含一个16位ADC专门转换PIR微弱的感应信号；同时包含一个0.4Hz~7Hz的数字带通滤波器，有效地处理ADC转换出来的数字信号；内置一个7位SAR型ADC，用户可以根据实际应用适当配置使用。内置MCU资源丰富，包括中断、定时器、PWM输出等。 ◆ 除了跳转指令2个指令周期外，其他指令都是一个指令周期\n◆ 2K片内ROM\n◆ 可直接、间接寻址\n◆ 2个16位定时器：\n TC0：外部事件计数器/PWM0/ Buzzer输出；\n TC1：外部事件计数器/PWM1/ Buzzer输出； \n◆ 内置POR、BOR\n◆ 内置上电复位时间PWRT和振荡器起振时间OSCT\n◆ 内置WDT看门狗\n◆ 内置可校准 IHRC振荡器\n◆ 内置可校准 ILRC振荡器\n◆ 一个安全位（代码寄存器中）保护程序不被读出\n◆ 384个RAM\n◆ 内置I2C通讯协议\n◆ 3组标准双向I;

H-SUN

华芯微电子

DirectFET Power MOSFET

Description The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geo

文件：247.22 Kbytes 页数：9 Pages

IRF

DirectFET Power MOSFET

Description The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：242.78 Kbytes 页数：9 Pages

IRF

Compatible with existing Surface Mount Techniques

Description The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：253.58 Kbytes 页数：10 Pages

IRF