丝印：H4N65CENB；Package：TO-263；650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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丝印：H4N65CEND；Package：TO-252；650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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丝印：H4N65CENF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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丝印：H4N65CENFT；Package：TO-220FT；650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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丝印：H4N65CENP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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丝印：H4N65CENU；Package：TO-251；650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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650V N-Channel Planar MOSFET

Description 650V N-Channel Planar MOSFET HRH4N65CENx is HRM high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This d

文件：3.34212 Mbytes 页数：13 Pages

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丝印：H7N65AD；Package：TO-252；650V N-Channel Planar MOSFET

Features RDSON≤ 1.4Ω @ Vgs=10 V, Id= 3.5A gate Charge(typical typical23 .05 nC) Crss (typical typical2.2pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (P

文件：2.26513 Mbytes 页数：12 Pages

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丝印：H7N65AF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤ 1.4Ω @ Vgs=10 V, Id= 3.5A gate Charge(typical typical23 .05 nC) Crss (typical typical2.2pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (P

文件：2.26513 Mbytes 页数：12 Pages

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