1/4 x various length and SFE in-line fuse holder

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EATON

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Automotive fast-acting glass fuse

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EATON

伊顿

Silicon Schottky Barrier Diode for Rectifying

Features • Good for high-frequency rectify. • LRP structure ensures higher reliability.

文件：30.81 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：191.09 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：82.73 Kbytes 页数：8 Pages

INTERSIL

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：82.73 Kbytes 页数：8 Pages

INTERSIL

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：191.09 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

文件：30.76 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

文件：30.76 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

文件：24.91 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司