Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

文件：24.91 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

• Low forward voltage drop and suitable for high effifiency rectifying.\n• DO-214 is suitable for high density surface mounting and high speed assembly.;

HITACHI

日立

GaAs 0.5-6GHz DPDT Switch

Description The HWS503 is a GaAs PHEMT MMIC DPDT switch operating at 0.5-6 GHz in a miniature USON6L (1.5 x 1.5 x 0.4mm) plastic lead (Pb) free package. The HWS503 features low insertion loss and high isolation with very low DC power consumption. This switch can be used in IEEE 802.11a/b/

文件：84.8 Kbytes 页数：2 Pages

HW

汉威光电

Ultra-Miniature 5W Single & Dual Output DC/DC Converters

文件：178.2 Kbytes 页数：2 Pages

MPD

4:1 Input, 5W Ultra-Miniature DC/DC Converters

文件：165.54 Kbytes 页数：2 Pages

MPD