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NSS1C300CTWG

BipolarPowerTransistors100V,3.0A,LowVCE(sat)PNPTransistor

ONSemiconductor’se2PowerEdgefamilyoflowVCE(sat) transistorsaresurfacemountdevicesfeaturingultra−lowsaturation voltage,VCE(sat),andhighcurrentgaincapability.Thesearedesigned foruseinlowervoltage,highspeedswitchingapplicationswhere affordableefficientenergycontr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NSS1C300E

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NSV1C300CT

BipolarPowerTransistors100V,3.0A,LowVCE(sat)PNPTransistor

ONSemiconductor’se2PowerEdgefamilyoflowVCE(sat) transistorsaresurfacemountdevicesfeaturingultra−lowsaturation voltage,VCE(sat),andhighcurrentgaincapability.Thesearedesigned foruseinlowervoltage,highspeedswitchingapplicationswhere affordableefficientenergycontr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NSV1C300CTWG

BipolarPowerTransistors100V,3.0A,LowVCE(sat)PNPTransistor

ONSemiconductor’se2PowerEdgefamilyoflowVCE(sat) transistorsaresurfacemountdevicesfeaturingultra−lowsaturation voltage,VCE(sat),andhighcurrentgaincapability.Thesearedesigned foruseinlowervoltage,highspeedswitchingapplicationswhere affordableefficientenergycontr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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