256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They

文件：118.44 Kbytes 页数：24 Pages

HitachiHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword 횞 8-bit) Ready/Busy and RES function (HN58V257A)

文件：239.5 Kbytes 页数：25 Pages

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256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They

文件：118.44 Kbytes 页数：24 Pages

HitachiHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They

文件：118.44 Kbytes 页数：24 Pages

HitachiHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword 횞 8-bit) Ready/Busy and RES function (HN58V257A)

文件：239.5 Kbytes 页数：25 Pages

RENESAS

瑞萨

256k EEPROM (32-kword 횞 8-bit) Ready/Busy and RES function (HN58V257A)

文件：239.5 Kbytes 页数：25 Pages

RENESAS

瑞萨

256k EEPROM (32-kword 횞 8-bit) Ready/Busy and RES function (HN58V257A)

文件：239.5 Kbytes 页数：25 Pages

RENESAS

瑞萨

256k EEPROM (32-kword 횞 8-bit) Ready/Busy and RES function (HN58V257A)

文件：239.5 Kbytes 页数：25 Pages

RENESAS

瑞萨

256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)

Description\nThe Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They als • Single 3 V supply: 2.7 to 5.5 V\n• Power dissipation:\n• On-chip latches: address, data, CE, OE, WE\n• Automatic page write (64 bytes): 10 ms max\n• Data polling and Toggle bit\n• Conforms to JEDEC byte-wide standard\n• 105 erase/write cycles (in page mode)\n• Software data protection\n• Industria;

HITACHI

日立

Memory-EEPROM

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