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型号	下载订购	功能描述	制造商上传企业	LOGO
HN58V1001	文件：119.74 Kbytes Page：22 Pages	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte 文件：119.74 Kbytes 页数：22 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HN58V1001	文件：260.279 Kbytes Page：24 Pages	1M EEPROM (128-kword 횞 8-bit) Ready/Busy and RES function Description Renesas Technologys HN58V1001 is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 文件：260.279 Kbytes 页数：24 Pages	RENESAS 瑞萨	RENESAS
HN58V1001	文件：300 bytes Page：1 Pages	1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function	Renesas 瑞萨	Renesas
HN58V1001FP-25	文件：260.279 Kbytes Page：24 Pages	1M EEPROM (128-kword 횞 8-bit) Ready/Busy and RES function Description Renesas Technologys HN58V1001 is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 文件：260.279 Kbytes 页数：24 Pages	RENESAS 瑞萨	RENESAS
HN58V1001FP-25	文件：119.74 Kbytes Page：22 Pages	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte 文件：119.74 Kbytes 页数：22 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HN58V1001FP-25E	文件：260.279 Kbytes Page：24 Pages	1M EEPROM (128-kword 횞 8-bit) Ready/Busy and RES function Description Renesas Technologys HN58V1001 is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 文件：260.279 Kbytes 页数：24 Pages	RENESAS 瑞萨	RENESAS
HN58V1001P-25	文件：119.74 Kbytes Page：22 Pages	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte 文件：119.74 Kbytes 页数：22 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HN58V1001T-25	文件：119.74 Kbytes Page：22 Pages	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte 文件：119.74 Kbytes 页数：22 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HN58V1001T-25	文件：260.279 Kbytes Page：24 Pages	1M EEPROM (128-kword 횞 8-bit) Ready/Busy and RES function Description Renesas Technologys HN58V1001 is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 文件：260.279 Kbytes 页数：24 Pages	RENESAS 瑞萨	RENESAS
HN58V1001T-25E	文件：260.279 Kbytes Page：24 Pages	1M EEPROM (128-kword 횞 8-bit) Ready/Busy and RES function Description Renesas Technologys HN58V1001 is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 文件：260.279 Kbytes 页数：24 Pages	RENESAS 瑞萨	RENESAS

技术参数

Family/ Series：
Parallel EEPROM
Interface：
Parallel
Memory Capacity (Kbit)：
1000
Organization (word)：
128
Package Type：
TSOP(32)
Access time (ns)：
250
Supply voltage (V)：
2.7 to 5.5
Operating temperature (°C)：
0 to 70
Application：
Consumer/Industrial
Production Status：
EOL
Remarks：
With reset function

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	HN58V1001FP-25	HITACHI/日立	23+	SOP32	3700	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
上海意淼电子科技有限公司	HN58V1001FP-25	HIT	23+	SOP	20000	全新原装假一赔十	询价
深圳市华来深电子有限公司	HN58V1001T-25	Renesas/日本瑞萨	23+	TFP_32DA(TSOP)	5000	公司只做原装,可配单	询价
深圳市安富世纪电子有限公司	HN58V1001T25	Renesas	23+	n/a	7300	专注配单,只做原装进口现货	询价
瀚佳科技(深圳)有限公司	HN58V256AFP12E	RENESAS/瑞萨	24+		65230		询价
深圳市华睿芯科技有限公司	HN58V256AFPI-12	HIT	24+	SOP28	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市宏世佳电子科技有限公司	HN58V256AFPI-12	HIT	2025+	SOP28	4165	全新原厂原装产品、公司现货销售	询价
深圳市华斯顿科技有限公司	HN58V256AT12	HITACHI	25+23+	New	30080	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市一线半导体有限公司	HN58V256AT-12	RENESAS	24+	TSOP28	14		询价
深圳市英卓尔科技有限公司	HN58V256AT-12	RENESAS	20+	TSSOP	2960	诚信交易大量库存现货	询价

更多HN58V1001供应商更新时间2026-1-30 11:10:00

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