HN58V1001FP-25E中文资料瑞萨数据手册PDF规格书

描述 Description

Renesas Technologys HN58V1001 is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.

特性 Features

• Single 3 V supply: 2.7 V to 5.5 V

• Access time: 250 ns (max)

• Power dissipation

- Active: 20 mW/MHz, (typ)

- Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 15 ms (max)

• Automatic page write (128 bytes): 15 ms (max)

• Data polling and RDY/Busy

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 104 erase/write cycles (in page mode)

• 10 years data retention

• Software data protection

• Write protection by RES pin

• There are also lead free products.