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HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU-Y

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F-Y

Audio-FrequencyGeneral-PurposeAmplifierApplications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HPH1B01SGA

.050PINHEADERS.050[1.27]CENTERLINE

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

详细参数

  • 型号:

    HN1B01FUGR

  • 功能描述:

    TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP

供应商型号品牌批号封装库存备注价格
TOSHIBA
2016+
SOT23-6
6528
只做进口原装现货!假一赔十!
询价
TOSHIBA
24+
SOT-363SOT-323-6
6200
新进库存/原装
询价
TOSHIBA
09+
SOT363
5500
原装无铅,优势热卖
询价
TOSHIBA
23+
SOT-163
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
TOS
2020+
SOT
4792
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TOSHIBA
16+
NA
8800
原装现货,货真价优
询价
ELM
23+
SOT-23
5000
原装正品,假一罚十
询价
TOSHIBA
24+
SOT363
1192
原装现货假一罚十
询价
TOSH
06+
SOT23
4300
全新原装进口自己库存优势
询价
TOSHIBA
2016+
SOT363
21924
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多HN1B01FUGR供应商 更新时间2025-5-5 18:49:00