HN1C03F

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

ForMutingAndSwitchingApplications IncludingtwodevicesinSM6(Superminitypewith6leads) Highemitter-basevoltage:VEBO=25V(min) HighreversehFE:reversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA)

HN1C03FU

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

ForMutingandSwitchingApplications IncludingtwodevicesinUS6(ultrasuperminitypewith6leads) Highemitter-basevoltage:VEBO=25V(min) HighreversehFE:reversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA)

HN1D01F

DIODE (ULTRAL HIGH SPEED SWITCHING APPLICATIONS)

Ultra-High-SpeedSwitchingApplications ●Smallpackage ●Lowforwardvoltage:VF(3)=0.92V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=2.2pF(typ.)

HN1D01FE

Silicon Epitaxial Planar Type Ultra High Speed Switching Application

UltraHighSpeedSwitchingApplication ●HN1D02FUiscomposedof2unitofcathodecommon. ●Lowforwardvoltage:VF(3)=0.92V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=2.2pF(typ.)

HN1D01FU

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

UltraHighSpeedSwitchingApplication ●Smallpackage ●Lowforwardvoltage:VF(3)=0.92V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=2.2pF(typ.)

HN1D02F

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

Ultra-High-SpeedSwitchingApplications ●TheHN1D02Fiscomposedoftwo(2)cathodecommonunits. ●Lowforwardvoltage:VF(3)=0.90V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

HN1D02FE

Silicon Epitaxial Planar Type Ultra High Speed Switching Application

UltraHighSpeedSwitchingApplication ●TheHN1D02FUiscomposedof2commoncathodeunits. ●Lowforwardvoltage:VF(3)=0.90V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

HN1D03F

Diode Silicon Epitaxial Planar Type

UltraHighSpeedSwitchingApplication ●Builtinanodecommonandcathodecommon. Unit1 ●LowforwardvoltageQ1,Q2:VF(3)=0.90V(typ.) ●FastreverserecoverytimeQ1,Q2:trr=1.6ns(typ.) ●SmalltotalcapacitanceQ1,Q2:CT=0.9pF(typ.) Unit2 ●LowforwardvoltageQ3,Q4:VF(

HN1D03FU

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

UltraHighSpeedSwitchingApplication ●Builtinanodecommonandcathodecommon. Unit1 ●LowforwardvoltageQ1,Q2:VF(3)=0.90V(typ.) ●FastreverserecoverytimeQ1,Q2:trr=1.6ns(typ.) ●SmalltotalcapacitanceQ1,Q2:CT=0.9pF(typ.) Unit2 ●LowforwardvoltageQ3,Q4:VF(

HN1J02FU

P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

HighSpeedSwitchingApplications AnalogSwitchApplications ●Highinputimpedance ●Lowthresholdvoltage:Vth=−0.5V~−1.5V ●Highspeed ●Smallpackage