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HN1B01F

Audio-Frequency General-Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

Audio-Frequency General-Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FDW1T1

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating ♦HumanBodyModel:3A ♦MachineModel:C •SPrefixforAutomo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HN1B01FU

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU-GR

Audio-Frequency General-Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU-Y

Audio-Frequency General-Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F-Y

Audio-Frequency General-Purpose Amplifier Applications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

供应商型号品牌批号封装库存备注价格
HITACHI
24+
SOP-24
224
询价
HITACHI
2023+
SOP-24
50000
原装现货
询价
2017+
SMD
1585
只做原装正品假一赔十!
询价
RFM
24+
SMD
5000
RFM专营品牌原装正品假一罚十
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MINGTEK
2016+
DIP
8850
只做原装,假一罚十,公司专营变压器,滤波器!
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MINGTEK
1736+
DIP
15238
原厂优势渠道
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MINGTEK
15+
DIP
45
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询价
N/A
24+
DIP20
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
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MINGTEK
2022+
DIP20
90000
原厂原盒现货,年底清仓大特价!送
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23+
DIP-20
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
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