首页 >HN-1010>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRF1010EZ

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1010EZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1010EZL

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZS

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    HN-1010

  • 功能描述:

    射频模块 HopNet 10 Series Outdoor/Weatherproof

  • RoHS:

  • 制造商:

    Linx Technologies

  • 产品:

    Transceiver Modules

  • 频带:

    902 MHz to 928 MHz

  • 输出功率:

    - 15.5 dBm to + 12.5 dBm

  • 接口类型:

    UART

  • 工作电源电压:

    - 0.3 VDC to + 5.5 VDC

  • 传输供电电流:

    38.1 mA

  • 接收供电电流:

    22.7 mA

  • 天线连接器类型:

    U.FL

  • 最大工作温度:

    + 85 C

  • 尺寸:

    1.15 mm x 0.63 mm x 0.131 mm

供应商型号品牌批号封装库存备注价格
2017+
SMD
1585
只做原装正品假一赔十!
询价
RFM
24+
SMD
5000
RFM专营品牌原装正品假一罚十
询价
MURATA
20+
射频元件
19
就找我吧!--邀您体验愉快问购元件!
询价
MINGTEK
2016+
SOP
8850
只做原装,假一罚十,公司专营变压器,滤波器!
询价
MINGTEK
1736+
SOP
15238
原厂优势渠道
询价
MINGTEK
2447
SOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TOSHIBA
24+
SOT-363SOT-323-6
6200
新进库存/原装
询价
TOSHIBA/东芝
23+
SOT-363
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
TOSHIBA
23+
SOT-363
48557
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
MINGTECH
23+
SOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
更多HN-1010供应商 更新时间2025-7-12 17:18:00