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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IXFA7N80P	文件：152.81 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicRectifier ●LowQG Applications ●DC-DCConverters ●BatteryChargers ●Switch-ModeandResonant-ModePowerSupplies	IXYS IXYS Corporation	IXYS
IXFH7N80	文件：78.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive	IXYS IXYS Corporation	IXYS
IXFH7N80	文件：372.57 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFI7N80P	文件：327.02 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFI7N80P	文件：146.22 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity	IXYS IXYS Corporation	IXYS
IXFM7N80	文件：78.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive	IXYS IXYS Corporation	IXYS
IXFM7N80	文件：276.14 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP7N80	文件：295.92 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.44Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP7N80P	文件：146.22 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity	IXYS IXYS Corporation	IXYS
IXFP7N80P	文件：260.55 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	HMS81008E	HYNIX	24+	SOP-28P	430		询价
深圳市威尔健半导体有限公司	HMS81008E	ABOV	23+	SOP-28	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	HMS81008E	HYNIX	23+	SOP-28P	3700	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市得捷芯城科技有限公司	HMS81008E	ABOV	24+	NA/	9882	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市宏兴瑞科技有限公司	HMS81008E	ABOV/现代	24+	SOP-28	60000		询价
深圳市赛美科科技有限公司	HMS81016E	ROHS		ROHS	56520	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市明嘉莱科技有限公司	HMS81016E	N/A	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市科芯源微电子有限公司	HMS81016E	NA	25+	原厂原封可拆样	54687	百分百原装现货实单必成	询价
深圳市华来深电子有限公司	HMS81016E-UE028	HY	23+	SOP	8560	受权代理!全新原装现货特价热卖!	询价
深圳市华斯顿科技有限公司	HMS81016E-UE028	HY	25+23+	SOP	69911	绝对原装正品现货,全新深圳原装进口现货	询价

更多HMS7N80K供应商更新时间2025-5-18 16:30:00

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