IXGN60N60

IGBT

DESCRIPTION ·LowVCE(sat)forminimumon-stateconductionlosses ·Veryhighcurrent,fastswitchingIGBT ·MOSGateturn-ondrivesimplicity APPLICATIONS ·ACmotorspeedcontrol ·DCservoandrobotdrives ·Uninterruptiblepowersupplies(UPS)

IXGN60N60

Ultra-LowVCE(sat)IGBT

Features ●InternationalstandardpackageSOT-227B ●Aluminiumnitrideisolation -highpowerdissipation ●Isolationvoltage3000V~ ●Veryhighcurrent,fastswitchingIGBT ●LowVCE(sat)forminimumon-stateconductionlosses ●MOSGateturn-ondrivesimplicity ●Lowcollector-to-cas

IXGT60N60

Ultra-LowVCE(sat)IGBT

Features •InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 •NewgenerationHDMOSTMprocess •LowVCE(sat)forminimumon-stateconductionlosses •Highcurrenthandlingcapability •MOSGateturn-ondrivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobot

NGTB60N60SWG

IGBT

NP60N60VDK

60V??60A??N-channelPowerMOSFETApplication:Automotive

NST60N60SJ

N-ChannelPowerMOSFET60A/600V

PS60N60

N-ChannelEnhancementModeFieldEffectTransistor-60Amp60Volt

RLFTPGB60N60CT

N-CHANNELIGBT

APPLICATIONS Weldingconverters PowerFactorCorrection AirCondition FEATURES Lowgatecharge TrenchFSTechnology, RoHSproduct

RLPGB60N60CT

IGBT

Features 600V,60A VCE(sat)(typ.)=1.85V@VGE=15V,IC=60A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOAusingNPTtechnology GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS

SSG60N60

85AMP600VOLTSFASTPOWERIGBT