MOSFET/IGBT MOSFET/IGBT

• 工业标准封装\n• 玻璃钝化芯片\n• 低热阻\n• 符合RoHS规范\n• UL认可 E320098;

NPS

尼尔半导体

N-Channel Power MOSFET 60A/600V

文件：2.85866 Mbytes 页数：7 Pages

NELLSEMI

尼尔半导体

N-Channel Enhancement Mode Field Effect Transistor - 60Amp 60Volt

文件：194.45 Kbytes 页数：5 Pages

SIRECT

矽莱克半导体

N-CHANNEL IGBT

APPLICATIONS Welding converters Power Factor Correction Air Condition FEATURES  Low gate charge  Trench FS Technology,  RoHS product

文件：435.77 Kbytes 页数：7 Pages

GWSEMI

唯圣电子

IGBT

Features  600V,60A  VCE(sat)(typ.)=1.85V@VGE=15V,IC=60A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA using NPT technology General Description Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS

文件：354.54 Kbytes 页数：6 Pages

GWSEMI

唯圣电子