HMC757RF/IF射频/中频RFID的射频放大器规格书PDF中文资料

General Description

The hmC757 is a three stage GaAs phemT mmiC 1/2 watt power Amplifier which operates between 16 and 24 Ghz. The hmC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30 pAe from a +7V supply. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into multiChip-modules (mCms). All data is taken with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).

特性 Features

Saturated Output Power: +30 dBm @ 30 PAE

High Output ip3: +37 dBm

High Gain: 22 dB

DC Supply: +7V @ 395mA

50 ohm Matched Input/Output

Die Size: 2.4 x 0.9 x 0.1 mm

Typical Applications

The hmC757 is ideal for:

• point-to-point radios

• point-to-multi-point radios

• VsAT

• military & space