HMC756RF/IF射频/中频RFID的射频放大器规格书PDF中文资料

General Description

The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifi er which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28 PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fi xture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).

Features

Saturated Output Power: +33 dBm @ 28 PAE

High Output IP3: +41 dBm

High Gain: 23 dB

DC Supply: +7V @ 790 mA

DC Blocked RF I/Os

No External Matching Required

Die Size: 2.4 x 1.6 x 0.1 mm

Typical Applications

The HMC756 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

• Military & Space