丝印：HM60N20；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

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HMSEMI

华之美半导体

丝印：HM60N20D；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET

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HMSEMI

华之美半导体

N沟道中压大电流MOS(100V以下)

HmpowerSemi

虹美功率

HiPerFET MOSFET ISOPLUS220TM

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to t

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space sav

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IXYS

艾赛斯