丝印：HM60N20D；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET

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HiPerFET MOSFET ISOPLUS220TM

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to t

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HiPerRFTM Power MOSFETs

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance -

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HiPerRF Power MOSFET F-Class: MegaHertz Switching

文件：103.11 Kbytes 页数：2 Pages

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