1A Ni-MH battery charge management integrated circuit

文件：327.78 Kbytes 页数：12 Pages

HMSEMI

华之美半导体

Low Switching Losses

文件：295.48 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for 4X Rated Current (ILM) • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode

文件：286.34 Kbytes 页数：10 Pages

IRF

Low Switching Losses

文件：295.48 Kbytes 页数：11 Pages

IRF