Switch type lithium battery charge management chip

文件：601.9 Kbytes 页数：13 Pages

HMSEMI

华之美半导体

多节锂电充电IC

HMsemi

华之美半导体

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for 4X Rated Current (ILM) • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distri

文件：290.61 Kbytes 页数：10 Pages

IRF

Low Switching Losses

文件：299.75 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5μs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • Hi

文件：319.45 Kbytes 页数：10 Pages

IRF