丝印：HM40P06K；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

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HMSEMI

华之美半导体

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -40V,ID = -6A RDS(ON)

文件：305.65 Kbytes 页数：6 Pages

NCEPOWER

新洁能

NCE P-Channel Enhancement Mode Power MOSFET

文件：402.55 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Glass Passivated Bridge Rectifiers

文件：213.7 Kbytes 页数：3 Pages

TSC

台湾半导体