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型号	下载订购	功能描述	制造商上传企业	LOGO
HM4069	文件：1.03066 Mbytes Page：15 Pages	1-4 lithium/lead-acid battery switch type Charging management chip 文件：1.03066 Mbytes 页数：15 Pages	HMSEMI 华之美半导体	HMSEMI
HM4069	文件：300 bytes Page：1 Pages	镍镉/镍氢/铅酸电池充电IC	HMsemi 华之美半导体	HMsemi
IRGP4069D-EPBF	文件：432.4 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package Benefits • 文件：432.4 Kbytes 页数：11 Pages	IRF	IRF
IRGP4069DPBF	文件：432.4 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package Benefits • 文件：432.4 Kbytes 页数：11 Pages	IRF	IRF
IRGP4069DPBF	文件：301.33 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：301.33 Kbytes 页数：11 Pages	IRF	IRF

更多HM4069供应商更新时间2025-10-11 17:26:00