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30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

30N06

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

30N06

60V,30AN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06

60VN-ChannelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

30N06.

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06B

25A竊?0VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

30N06L

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06-Q

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06V-Q

N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR

DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

FQB30N06

60VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB30N06L

60VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06L

N-ChannelQFET짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06LTM

N-ChannelQFET짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD30N06

60VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
FSC/ON/FH
21+ROHS
TO-252TO-220
263210
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
VBSEMI
19+
TO-220
29600
绝对原装现货,价格优势!
询价
VBSEMI/台湾微碧
QFN
265209
假一罚十原包原标签常备现货!
询价
VBSEMI/台湾微碧
23+
QFN
50000
全新原装正品现货,支持订货
询价
VBsemi
21+
QFN
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
VBsemi
2234+
QFN
7519
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
VBSEMI/台湾微碧
24+23+
QFN
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
VBsemi
2023+
QFN
700000
柒号芯城跟原厂的距离只有0.07公分
询价
VBsemi
24+
QFN
9000
只做原装正品 有挂有货 假一赔十
询价
更多HM30N06DF供应商 更新时间2024-6-17 11:30:00