HM2N10

N-Channel Enhancement Mode Power MOSFET

HM2N10B

Marking：0102；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

RFP2N10

2A,80Vand100V,1.05Ohm,N-ChannelPowerMOSFETs

RFP2N10

2A,80Vand100V,1.05Ohm,N-ChannelPowerMOSFETs

Description TheseareN-channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters.motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

RFP2N10L

2A,80Vand100V,1.050Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFP2N08LandRFP2N10LareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedth

RFP2N10L

N-Channel100-V(D-S)MOSFET

STN2N10L

N-Channel100-V(D-S)MOSFET

STN2N10L

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.35Ω ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER

SW2N10

N-channelSOT-23MOSFET

UT2N10

2Amps,100VoltsN-CHANNELPOWERMOSFET