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IRF640

N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150Ω ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF640

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

IRF640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640

N-ChannelPowerMOSFETs,18A,150-200V

N-ChannelPowerMOSFETs,18A,150-200V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640

18A,200V,0.180Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半导体

IRF640

iscN-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=18A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Designedforlowvoltage,highspeedpowerswitching applicationssuch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF640

N-ChannelEnhancementModePOWERMOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

WEITRON

Weitron Technology

IRF640

POWERTRMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

SUNTAC

Suntac Electronic Corp.

IRF640

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements

DCCOM

Dc Components

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
AVAGO全系列□
23+
AVAGO全系列□
25800
AVAGO原厂授权代理分销现货只做原装正迈科技
询价
AVAGO
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
询价
BRO
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
Broadcom
22+
NA
1136
加我QQ或微信咨询更多详细信息,
询价
Avago
2023+环保现货
SMD
480000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
Broadcom Limited
17+18+22+
径向
25480
原装+实力库存+当天发货
询价
Broadcom Limited
24+
径向
6000
只做原装,欢迎询价,量大价优
询价
avago
24+
500000
行业低价,代理渠道
询价
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
询价
更多HLMP-D640供应商 更新时间2025-7-22 17:24:00