INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt™Technology

1Features •Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A •Widecommon-moderange:–0.1Vto+85V •High-resolution,16-bitdelta-sigmaADC •Currentmonitoringaccuracy:A/BGrad

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt™Technology

1Features •Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A •Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

IQXO-740

CrystalClockOscillatorSpecification

IRC740

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease

IRF740

N-ChannelPowerMOSFETs,10A,350V/400V

IRF740

N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET

ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U

IRF740

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRF740

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF740

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

IRF740

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis