INA740x 85 V, 16-Bit, Precision I2C Output Digital Power Monitor with EZShunt™ Technology

1 Features • Low loss integrated shunt resistor – Internal resistance: 800 μΩ, TA = 25°C – Continuous current: ±35 A, TA = 25°C – Peak measurement capability: ±39.32 A • Wide common-mode range: –0.1 V to +85 V • High-resolution, 16-bit delta-sigma ADC • Current monitoring accuracy: A/B Grad

文件：1.4142 Mbytes 页数：41 Pages

TI

德州仪器

INA740x 85 V, 16-Bit, Precision I2C Output Digital Power Monitor with EZShunt™ Technology

1 Features • Low loss integrated shunt resistor – Internal resistance: 800 μΩ, TA = 25°C – Continuous current: ±35 A, TA = 25°C – Peak measurement capability: ±39.32 A • Current monitoring accuracy: A/B Grade, maximum – Offset current: ±6.25 mA / ±62.5 mA – Offset drift: ±30 μA/°C (A and B

文件：2.37007 Mbytes 页数：50 Pages

TI

德州仪器

Crystal Clock Oscillator Specification

文件：155.15 Kbytes 页数：2 Pages

IQD

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：221.97 Kbytes 页数：8 Pages

IRF

N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. 1. HIGH CURRENT SWITCHING 2. UNINTERRUPTIBLE POWER SUPPLY (U

文件：93.41 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体