60V, 10A Half Bridge Power MOSFET Array

Features • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V • rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor • Avalanche Energy. . . . . . .

文件：464.05 Kbytes 页数：7 Pages

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瑞萨

60V, 10A Half Bridge Power MOSFET Array

Features • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V • rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor • Avalanche Energy. . . . . . .

文件：464.05 Kbytes 页数：7 Pages

RENESAS

瑞萨

60V, 10A Half Bridge Power MOSFET Array

Description The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness. Fea

文件：59.09 Kbytes 页数：8 Pages

Intersil

60V, 10A Half Bridge Power MOSFET Array

Description The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness. Fea

文件：59.09 Kbytes 页数：8 Pages

Intersil

60V, 10A Half Bridge Power MOSFET Array

Features • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V • rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor • Avalanche Energy. . . . . . .

文件：464.05 Kbytes 页数：7 Pages

RENESAS

瑞萨

60V, 10A Half Bridge Power MOSFET Array

Features • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V • rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor • Avalanche Energy. . . . . . .

文件：464.05 Kbytes 页数：7 Pages

RENESAS

瑞萨

60V, 10A Half Bridge Power MOSFET Array

Description The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness. Fea

文件：59.09 Kbytes 页数：8 Pages

Intersil

100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-s

文件：392.57 Kbytes 页数：12 Pages

Intersil

100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

Half Bridge Driver The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage pro

文件：387.15 Kbytes 页数：13 Pages

Intersil

100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-s

文件：392.58 Kbytes 页数：12 Pages

Intersil