60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Description The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device

文件：60.12 Kbytes 页数：9 Pages

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60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates

文件：538.4 Kbytes 页数：10 Pages

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60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

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60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Description The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device

文件：60.12 Kbytes 页数：9 Pages

INTERSIL

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates

文件：538.4 Kbytes 页数：10 Pages

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瑞萨

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates

文件：538.4 Kbytes 页数：10 Pages

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瑞萨

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Description The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device

文件：60.12 Kbytes 页数：9 Pages

INTERSIL

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Description\nThe HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device pe • Three 3.5A Power MOS N-Channel Transistors\n• Output Voltage to 60V\n• rDS(ON) . . . . . 0.225Ω Max Per Transistor at VGS = 10V\n• Pulsed Current . . . . . . . . . . . . . . . .10A Each Transistor\n• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor\n• Grounded Tab Eliminates Heat Sink Is;

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