HIP0061AS1数据手册Renesas中文资料规格书

描述 Description

The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device performance and ruggedness.
The HIP0061 is designed to integrate three power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Lamps, Solenoids and Resistive Loads.

特性 Features

• Three 3.5A Power MOS N-Channel Transistors
• Output Voltage to 60V
• rDS(ON) . . . . . 0.225Ω Max Per Transistor at VGS = 10V
• Pulsed Current . . . . . . . . . . . . . . . .10A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink IsolationApplications
• Automotive
• Appliance
• Industrial Control
• Robotics
• Relay, Solenoid, Lamp Drivers

应用 Application

• Automotive
• Appliance
• Industrial Control
• Robotics
• Relay, Solenoid, Lamp Drivers