60V, 10A Half Bridge Power MOSFET Array

Description The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness. Fea

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60V, 10A Half Bridge Power MOSFET Array

Features • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V • rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor • Avalanche Energy. . . . . . .

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