HGTP7N60B3D资料datasheet下载供应代理-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HGTP7N60B3D	文件：163.69 Kbytes Page：8 Pages	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop 文件：163.69 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild
HGTP7N60B3D	文件：94.32 Kbytes Page：7 Pages	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop 文件：94.32 Kbytes 页数：7 Pages	Intersil	Intersil
HGTP7N60B3D	文件：300 bytes Page：1 Pages	IGBT 600V 14A 60W TO220AB	ONSEMI 安森美半导体	ONSEMI
HGTP7N60B3D	文件：100 bytes Page：1 Pages	Package：TO-220-3；包装：管件类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 14A 60W TO220AB	ONSEMI 安森美半导体	ONSEMI

更多HGTP7N60B3D供应商更新时间2025-12-10 13:38:00