24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately betwee

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仙童半导体

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately betwee

文件：99.41 Kbytes 页数：7 Pages

INTERSIL

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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瑞萨

24A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

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INTERSIL

24A, 600V, UFS Series N-Channel IGBTs

Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l

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HARRIS

24A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

文件：131.23 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体