330mJ, 400V, N-Channel Ignition IGBT

General Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some sp

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

330mJ, 400V, N-Channel Ignition IGBT

General Description\nThis N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specif • Logic Level Gate Drive\n• ESD Gate Protection\n• SCIS Energy = 330mJ at TJ = 25oCApplications\n• Coil-On Plug Applications;

ONSEMI

安森美半导体

FCS
TO-263

FCS

上传：深圳市盈利润达电子有限公司

ON/安森美
SMD

ON/安森美

上传：深圳市明嘉莱科技有限公司

FAIRCHILD
TO-247

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

上传：深圳市华康联电子科技有限公司（销售一部）