丝印：HGN；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：HGN；Package：DSBGA(YFP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：HGN；Package：DSBGA(YFP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：HGN；Package：DSBGA(YZP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：HGN；Package：DSBGA(YZP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：HGN；Package：DSBGA(YFP)；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：821.71 Kbytes 页数：25 Pages

TI

德州仪器

丝印：HGN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：815.65 Kbytes 页数：25 Pages

TI

德州仪器

丝印：HGN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：815.65 Kbytes 页数：25 Pages

TI

德州仪器

丝印：HGN；Package：DSBGA(YFP)；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：821.71 Kbytes 页数：25 Pages

TI

德州仪器

丝印：GN036N08S；Package：DFN5X6；80V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductria

文件：735.14 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体