丝印：HGP；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta

文件：668.54 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：HGP；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：HGP；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series

Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge

文件：182.78 Kbytes 页数：6 Pages

BOURNS

伯恩斯

丝印：HGP；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

文件：609.41 Kbytes 页数：4 Pages

BYTESONIC

松浩电子

丝印：GB019N04A；Package：GP019N04A；40V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and I

文件：1.25025 Mbytes 页数：7 Pages

HUNTECK

恒泰柯半导体

丝印：GP019N04A；Package：TO-220；40V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and I

文件：1.25025 Mbytes 页数：7 Pages

HUNTECK

恒泰柯半导体

丝印：GP033N10S；Package：TO-220；100V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ M

文件：967.15 Kbytes 页数：7 Pages

HUNTECK

恒泰柯半导体

丝印：GP037N10S；Package：TO-220；100V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control

文件：841.5 Kbytes 页数：7 Pages

HUNTECK

恒泰柯半导体

丝印：GB090N06SL；Package：TO-263；60V N-Ch Power MOSFET

Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Telecoms and

文件：805.9 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：GB090N06SL；Package：TO-263；60V N-Ch Power MOSFET

Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Telecoms and

文件：805.9 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体