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HGT

型号:4.0SMDJ78A;Package:DO-214AB;Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta

文件:668.54 Kbytes 页数:5 Pages

YFWDIODE

佑风微电子

HGT

型号:SMAJ350CA-AT;Package:DO-214AC;400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件:3.2336 Mbytes 页数:7 Pages

UNSEMI

优恩半导体

HGT

型号:SMDJ78A;Package:DO-214AB;SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件:204.1 Kbytes 页数:5 Pages

SUNMATE

森美特

HGT

型号:SMLJ78A;Package:SMC;SMLJ Transient Voltage Suppressor Diode Series

Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge

文件:182.78 Kbytes 页数:6 Pages

Bourns

伯恩斯

GT009N04A

型号:HGT009N04A;Package:TOLL;40V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ M

文件:987.64 Kbytes 页数:6 Pages

HUNTECK

恒泰柯半导体

G20N60C3

型号:HGT1S20N60C3S;Package:TO-263AB;45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件:81.67 Kbytes 页数:7 Pages

Intersil

型号:HGT1N30N60A4D;600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only m

文件:144.1 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

型号:HGT1N40N60A4;600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only

文件:152.32 Kbytes 页数:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

型号:HGT1N40N60A4D;600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only

文件:152.32 Kbytes 页数:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

型号:HGT1S10N120BNS;35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

文件:217.6 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    HGT

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 78volts 5uA 22.8 Amps Uni-Dir

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
MCC/美微科
2019+PB
SMC
89000
原装正品 可含税交易
询价
MICROSEMI
08+
DO-214AB
76000
绝对全新原装强调只做全新原装现
询价
MCC
19+
SMC
200000
询价
MCC
20+
SMC
36800
原装优势主营型号-可开原型号增税票
询价
BOURNS
20+
DO-214
9746
就找我吧!--邀您体验愉快问购元件!
询价
Bourns
22+
NA
588900
加我QQ或微信咨询更多详细信息,
询价
MCC
24+
SMC
89000
原装现货假一赔十
询价
MCC/美微科
新年份
SMC
89000
原装正品大量现货,要多可发货,实单带接受价来谈!
询价
BOURNS
24+
SMC(DO214AB)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
MCC
2022+
SMC
20000
只做原装进口现货.假一罚十
询价
更多HGT供应商 更新时间2025-8-6 10:01:00