丝印 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
HGT | 型号:4.0SMDJ78A;Package:DO-214AB;Surface Mount Transient Voltage Suppressor Power 4000Watts FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta 文件:668.54 Kbytes 页数:5 Pages | YFWDIODE 佑风微电子 | YFWDIODE | |
HGT | 型号:SMAJ350CA-AT;Package:DO-214AC;400W Surface Mount Transient Voltage Suppressors Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde 文件:3.2336 Mbytes 页数:7 Pages | UNSEMI 优恩半导体 | UNSEMI | |
HGT | 型号:SMDJ78A;Package:DO-214AB;SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability 文件:204.1 Kbytes 页数:5 Pages | SUNMATE 森美特 | SUNMATE | |
HGT | 型号:SMLJ78A;Package:SMC;SMLJ Transient Voltage Suppressor Diode Series Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge 文件:182.78 Kbytes 页数:6 Pages | Bourns 伯恩斯 | Bourns | |
型号:HGT009N04A;Package:TOLL;40V N-Ch Power MOSFET Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ M 文件:987.64 Kbytes 页数:6 Pages | HUNTECK 恒泰柯半导体 | HUNTECK | ||
型号:HGT1S20N60C3S;Package:TO-263AB;45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately 文件:81.67 Kbytes 页数:7 Pages | Intersil | Intersil | ||
型号:HGT1N30N60A4D;600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only m 文件:144.1 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
型号:HGT1N40N60A4;600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only 文件:152.32 Kbytes 页数:10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
型号:HGT1N40N60A4D;600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only 文件:152.32 Kbytes 页数:10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
型号:HGT1S10N120BNS;35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low 文件:217.6 Kbytes 页数:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
HGT
- 功能描述:
TVS 二极管 - 瞬态电压抑制器 78volts 5uA 22.8 Amps Uni-Dir
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 极性:
Bidirectional
- 击穿电压:
58.9 V
- 钳位电压:
77.4 V
- 峰值浪涌电流:
38.8 A
- 封装/箱体:
DO-214AB
- 最小工作温度:
- 55 C
- 最大工作温度:
+ 150 C
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MCC/美微科 |
2019+PB |
SMC |
89000 |
原装正品 可含税交易 |
询价 | ||
MICROSEMI |
08+ |
DO-214AB |
76000 |
绝对全新原装强调只做全新原装现 |
询价 | ||
MCC |
19+ |
SMC |
200000 |
询价 | |||
MCC |
20+ |
SMC |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
BOURNS |
20+ |
DO-214 |
9746 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Bourns |
22+ |
NA |
588900 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
MCC |
24+ |
SMC |
89000 |
原装现货假一赔十 |
询价 | ||
MCC/美微科 |
新年份 |
SMC |
89000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
询价 | ||
BOURNS |
24+ |
SMC(DO214AB) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
MCC |
2022+ |
SMC |
20000 |
只做原装进口现货.假一罚十 |
询价 |
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