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SMDJ70

丝印:HGN;Package:DO-214AB;SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件:204.1 Kbytes 页数:5 Pages

SUNMATE

森美特

HGN036N08S

丝印:GN036N08S;Package:DFN5X6;80V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductria

文件:735.14 Kbytes 页数:6 Pages

HUNTECK

恒泰柯半导体

HGN090N06SL

丝印:GN090N06SL;Package:DFN5X6;60V N-Ch Power MOSFET

Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Telecoms and

文件:769.57 Kbytes 页数:6 Pages

HUNTECK

恒泰柯半导体

HGN095NE4SL

丝印:GN095NE4SL;Package:DFN5X6;45V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

文件:767.89 Kbytes 页数:6 Pages

HUNTECK

恒泰柯半导体

HGN098N10S

丝印:GN098N10S;Package:DFN5X6;100V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and I

文件:972.29 Kbytes 页数:6 Pages

HUNTECK

恒泰柯半导体

HGN169N20S5

丝印:GN169N20S5;Package:DFN5X6;200V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and I

文件:882.19 Kbytes 页数:6 Pages

HUNTECK

恒泰柯半导体

HGN170A06SL

丝印:GN170A06SL;Package:DFN5X6;60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

文件:843.84 Kbytes 页数:6 Pages

HUNTECK

恒泰柯半导体

HGN-336

IEC 60320 INLET SOCKET WITH SWITCH, SNAP-IN

文件:216.17 Kbytes 页数:2 Pages

POWERDYNAMICS

PowerDynamics, Inc

HGN-336-1M-F-150

IEC 60320 INLET SOCKET WITH SWITCH, SNAP-IN

文件:216.17 Kbytes 页数:2 Pages

POWERDYNAMICS

PowerDynamics, Inc

HGN-336-1M-F-160

IEC 60320 INLET SOCKET WITH SWITCH, SNAP-IN

文件:216.17 Kbytes 页数:2 Pages

POWERDYNAMICS

PowerDynamics, Inc

详细参数

  • 型号:

    HGN

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 TVS Diode SMC Suf MT

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
UN SEMICONDUCTOR
24+
con
10000
查现货到京北通宇商城
询价
UN SEMICONDUCTOR
24+
con
2500
优势库存,原装正品
询价
CCD
08+
DO-214AB
76000
绝对全新原装强调只做全新原装现
询价
SUNMATE(森美特)
2019+ROHS
SMC(DO-214AB)
66688
森美特高品质产品原装正品免费送样
询价
CCD
13+
6238
原装分销
询价
LITTELFUSE
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
SMC
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
BrightKing
18+
DO-214
10000
正品原装,全新货源,可长期订货
询价
Brightking/君耀
19+
SMCDO-214AB
200000
询价
LITTELFUSE
20+
DO-214A
11520
特价全新原装公司现货
询价
更多HGN供应商 更新时间2025-8-14 14:01:00