IXTY1N80P

N-ChannelEnhancementModeAvalancheRated

KSMD1N80

800VN-ChannelMOSFET

KSMU1N80

800VN-ChannelMOSFET

KSMU1N80

800VN-ChannelMOSFET

MTD1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MTP1N80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHMS

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

PJP1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES •1A,800V,RDS(ON)=16Ω@VGS=10V,ID=0.5A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

PJU1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES •1A,800V,RDS(ON)=16Ω@VGS=10V,ID=0.5A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

SSF1N80D

MainProductCharacteristics