HCT574技术资料参数库存现货恩智浦nxp-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HCT574	文件：439.38 Kbytes Page：16 Pages	OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS	TITexas Instruments 德州仪器美国德州仪器公司	TI
HCT574	文件：62.38 Kbytes Page：7 Pages	Octal D-type flip-flop; positive edge-trigger; 3-state	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
HCT574Q	文件：210.62 Kbytes Page：10 Pages	HIGH-SPEED COMS LOGIC OCTAL D-TYPE FLIP-FLOP 3-STATE, POSITIVE-EDGE RIGGERED	TITexas Instruments 德州仪器美国德州仪器公司	TI
HCTS574D	文件：135.08 Kbytes Page：11 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo	Intersil Intersil Corporation	Intersil
HCTS574D	文件：430.6 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574D	文件：580.01 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574DMSR	文件：135.08 Kbytes Page：11 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo	Intersil Intersil Corporation	Intersil
HCTS574DMSR	文件：430.6 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574DMSR	文件：580.01 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574HMSR	文件：135.08 Kbytes Page：11 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo	Intersil Intersil Corporation	Intersil
HCTS574HMSR	文件：430.6 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574HMSR	文件：580.01 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574K	文件：135.08 Kbytes Page：11 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo	Intersil Intersil Corporation	Intersil
HCTS574K	文件：580.01 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574K	文件：430.6 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574KMSR	文件：135.08 Kbytes Page：11 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo	Intersil Intersil Corporation	Intersil
HCTS574KMSR	文件：430.6 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574KMSR	文件：580.01 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HCTS574MS	文件：135.08 Kbytes Page：11 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo	Intersil Intersil Corporation	Intersil
HCTS574MS	文件：430.6 Kbytes Page：10 Pages	RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

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详细参数

型号：
HCT574
制造商：
TI
制造商全称：
Texas Instruments
功能描述：
OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鼎欣微电子有限公司	HCT574	PHILIPS/飞利浦	23+	SSOP-20	12000		询价
绿盛电子(香港)有限公司	HCT574	PHILIP	2015+	TSOP	19889	一级代理原装现货,特价热卖!	询价
深圳市一线半导体有限公司	HCT574	HARRIS	98+	SOP-20P	12		询价
深圳市毅创腾电子科技有限公司	HCT574	PHILIPS		SOP	1000	正品原装--自家现货-实单可谈	询价
深圳市博浩通科技有限公司	HCT574	NXP	23+	SSOP-20	1011	优势库存	询价
深圳市鹏和科技有限公司	HCT574	TI热卖	24+	SOP7.2	5000	只做原装公司现货	询价
深圳市英卓尔科技有限公司	HCT574	PHILIPS	20+	SSOP-20	2960	诚信交易大量库存现货	询价
艾睿国际（香港）有限公司	HCT574	NULL	2021+	SOP	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市航润创能电子集团有限公司	HCT574	HARRIS	21+	SOP	13	原装现货假一赔十	询价
深圳市威尔健半导体有限公司	HCT574	TI有量	23+	SOP7.2	50000	全新原装正品现货,支持订货	询价

更多HCT574供应商更新时间2024-9-20 10:58:00

详细参数

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