HC7701A技术资料参数供应商报价恒成微-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HC7701A	文件：300 bytes Page：1 Pages	同步整流IC	HCWSEMI 恒成微	HCWSEMI
HC7701S	文件：300 bytes Page：1 Pages	同步整流IC	HCWSEMI 恒成微	HCWSEMI
IRF7701	文件：147.76 Kbytes Page：9 Pages	Power MOSFET(Vdss=-12V) Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex 文件：147.76 Kbytes 页数：9 Pages	IRF	IRF
IRF7701GPBF	文件：241.74 Kbytes Page：9 Pages	HEXFET짰 Power MOSFET Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex 文件：241.74 Kbytes 页数：9 Pages	IRF	IRF
IRF7701PBF	文件：204.94 Kbytes Page：9 Pages	Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex 文件：204.94 Kbytes 页数：9 Pages	IRF	IRF

更多HC7701供应商更新时间2025-12-26 9:04:00