碳化硅SIC Schottky diode

HXY MOSFET

华轩阳电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.30191 Mbytes 页数：8 Pages

SMCDIODE

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.69958 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.69958 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子