HC3D20065A技术资料参数原装现货华轩阳电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HC3D20065A	文件：300 bytes Page：1 Pages	碳化硅SIC Schottky diode	HXY MOSFET 华轩阳电子	HXY MOSFET
LGE3D20065A	文件：1.96897 Mbytes Page：5 Pages	Silicon Carbide Schottky Diode General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi 文件：1.96897 Mbytes 页数：5 Pages	LUGUANG 鲁光电子	LUGUANG
LGE3D20065D	文件：3.36241 Mbytes Page：5 Pages	Silicon Carbide SchottkyDiode 文件：3.36241 Mbytes 页数：5 Pages	LUGUANG 鲁光电子	LUGUANG
LGE3D20065H	文件：1.31517 Mbytes Page：5 Pages	Silicon Carbide Schottky Diode General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi 文件：1.31517 Mbytes 页数：5 Pages	LUGUANG 鲁光电子	LUGUANG

更多HC3D20065A供应商更新时间2025-11-26 11:06:00