首页 >HC11021>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
ComplementaryDarlingtonSiliconPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS ComplementaryDarlingtonSiliconPowerTransistors ...designedforuseasgeneralpurposeamplifiers,lowfrequencyswitchingandmotorcontrolapplications. •HighdcCurrentGain@10Adc—hFE=400Min(AllTypes) •Collector–EmitterSustainingVoltage VCEO(sus | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
ComplementaryDarlingtonSiliconPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERTRANSISTORS(15A,150-250V,175W) 15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
ComplementaryDarlingtonSiliconPowerTransistors ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-250V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):-3.4V(Max)@IC=-15A APPLICATIONS ·Lowcurrenthighspeedswitchingapplications ·Lowpoweraudioamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ComplementaryDarlingtonSiliconPowerTransistors ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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