中低压MOS（20-150V）

HXC-Power

惠海半导体

OptiMOSTM Power-Transistor, 60 V

文件：1.02236 Mbytes 页数：11 Pages

Infineon

英飞凌

MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：258.75 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：258.75 Kbytes 页数：6 Pages

ONSEMI

安森美半导体