COMPLEMENTARY SILICON POWER TRANSISTORS

Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T.

文件：34.84 Kbytes 页数：3 Pages

HSMC

华昕

TO-126 Bipolar Transistor

HSMC

华昕

ANALOGMULTIPLEXER/DEMULTIPLEXER WITHADDRESS LATCH: SINGLE8CHANNEL, DUAL 4CHANNEL, TRIPLE2CHANNEL

DESCRIPTION These devices are analog multiplexer demultiplexers in high speed silicon gate C2MOS technology. These analog switches are bidirectional and digitally controlled. A built-in level shifting is included to allow them a control input range of up to ± 6V (peak) for an analog signal with d

文件：302.72 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Supply voltage range: 2.5V~5.5V

description characteristic Supply voltage range: 2.5V~5.5V TTL and CMOS compatibility No external components except PIN diodes Available for carrier frequencies between 32.7 kHz and 40 kHz Internal filter for PCM frequency Enhanced immunity to a variety of interfering light and power noise

文件：1.36004 Mbytes 页数：8 Pages

EHAOAN

亿毫安电子

PNP SILICON TRANSISTOR

文件：125.27 Kbytes 页数：1 Pages

Huashan

华汕电子器件