线性霍尔传感器

注：不推荐在新设计上使用HAL830和HAL835，但目前未计划phase-out。\n TDK-Micronas 推荐在新设计上使用HAL830P（替代HAL830）和HAL835P（替代HAL835)。\nHAL 83x系列是耐用的多功能线性位移和90°以下角度测量。作为可编程输出低通滤波器，模拟和脉宽调制输出让本产品有了更多的灵活性。系列中的新产品延续了先行霍尔效应传感器的长期成功，全部本厂生产，并且有汽车级百万产品零缺陷记录。\n主要参数，比如磁场范围，输出格式，敏感性，0磁场输出电压（VOQ），及温度系数可以通过在非易失性内存中对磁电路（线性和二次）编程来进行调整。产品具有带斩 ·High-precision linear Hall-effect sensor with 12-bit analog output\n·Offset drift over temperature less than ±0.2% of VSUP (±0.1% for HAL 835)\n·Programmable temperature compensation for sensitivity\n·Open-circuit (ground and supply line break) detection with 5 kΩ pull-up and pull-down resi;

TDK-Micronas

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor

General Description This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant

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Huashan

华汕电子器件

500V N-Channel MOSFET

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