HFP830中文资料华汕电子器件数据手册PDF规格书
HFP830规格书详情
General Description
This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.
特性 Features
• 4.5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF830
产品属性
- 型号：
HFP830
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEMIHOW |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SEMIHOW |
25+23+ |
TO-220 |
23610 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SEMIHOW |
2406+ |
TO-220 |
1850 |
诚信经营!进口原装!量大价优! |
询价 | ||
SEMIHOW |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO-220 |
7000 |
询价 | |||
SEMIHOW |
1922+ |
NA |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
询价 | ||
SEMIHOW |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
SEMIHOW |
24+ |
TO-220 |
60000 |
询价 | |||
SEMIHOW/韩国半导体 |
2026+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
