两路独立输出的双霍尔效应传感器

HAL 7xy是配有S1、S2两个独立CMOS技术霍尔片的单体霍尔效应传感器，有两个开漏输出。HAL730具有计数和方向输出。计数输出根据磁场接近霍尔片S1的情况作霍尔感应开关活动。方向输出指明磁介质线性或者旋转运动的方向。配合活动的对象交替输出磁场N或S极，产品就能产生用于控制对象位置、速度和方向的信号。HAL7xy包含温度补偿和主动偏置补偿。这些特性在全温度和全电压范围内提供了优越的稳定性，以及适应机械应力的开关点。HAL 7xy产品系为工业和汽车应用设计，工作电压范围从3.8伏到24伏，环境温度范围从–40 °C 到170 °C。产品有 SMD OT89B封装。 ·Operates from –40 °C up to 170 °C junction temperature\n·Operates from 3.8 V to 24 V supply voltage\n·Generation of a direction signal (HAL 730 only)\n·Operates with static magnetic fields and dynamic magnetic fields up to 10 kHz\n·Overvoltage protection at all pins\n·Reverse-voltage protection at ;

TDK-Micronas

Hall-Effect Sensors with Direction Detection

文件：1.02395 Mbytes 页数：19 Pages

MICRONAS

Package：TO-243AA，变式；包装：带盒（TB） 功能：卡销 类别：传感器，变送器 磁性传感器 - 开关（固态） 描述：MAGNETIC SWITCH LATCH SOT89B-2

TDK-Micronas GmbH

Hall-Effect Sensors with Direction Detection

文件：1.02395 Mbytes 页数：19 Pages

MICRONAS

N-Channel Enhancement Mode Field Effect Transistor

General Description these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment Features • 5.5A, 400V, RDS(on)

文件：346.18 Kbytes 页数：6 Pages

Huashan

华汕电子器件

400V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 18 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V ❐

文件：968.22 Kbytes 页数：8 Pages

SEMIHOW